KI1304BDL Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel 30-V (D-S) MOSFET

SMD Type
TransistIoCrs
N-Channel 30-V (D-S) MOSFET
KI1304BDL
Features
TrenchFET Power MOSFET
100% Rg Tested
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 ) Tc=25
--
Tc=70
Continuous drain current (TJ = 150 ) Ta=25
--
Ta=70
Pulsed drain current
Continuous Source Drain Diode Current Tc=25
Ta=25
Symbol
Rating
Unit
VDS
30
V
VGS
12
V
ID
0.90
0.71
A
ID
0.85*1,2
0.68*1,2
A
IDM
A
0.31
IS
A
0.28
Power dissipation
--
Tc=25
Tc=70
PD
0.37
0.24
W
Power dissipation
--
Ta=25
Ta=70
PD
0.34*1,2
0.22*1,2
W
Operating junction and storage temperature range
Tj,Tstg
-55 to +150
*1 Surface Mounted on 1" X 1" FR4 Board.
*2 t = 5 sec
Thermal Resistance Ratings Ta = 25
Parameter
Maximum Junction-to-Ambient*1,2
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Symbol
RthJA
RthJF
Typical
315
285
Maximum
375
340
Unit
/W
*1 Surface Mounted on 1" X 1" FR4 Board.
*2 Maximum under steady state conditions is 360 /W.
1 Gate
2 Source
3 Drain
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