KI007P-HF-3 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
P-Channel MOSFET
KI007P-HF
MOSFET
■ Features
● VDS (V) =-12V
● ID =-3.5 A
● RDS(ON) ＜ 65mΩ (VGS =-4.5V , ID=-1A)
● RDS(ON) ＜ 100mΩ (VGS =-2.5V , ID=-0.5A)
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=25℃
Power Dissipation
Junction Temperature
Junction Storage Temperature Range
Symbol
Rating
Unit
VDS
-12
V
VGS
±12
ID
3.5
A
PD
1
W
TJ
150
℃
Tstg
-55 to 150
Unit: mm
0.15 +0.02
-0.02
1. Gate
2. Source
3. Drain
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
Test Conditions
ID=-250μA, VGS=0V
VDS=-12V, VGS=0V,TJ=25℃
VDS=0V, VGS=±12V
VDS=VGS ID=-250μA
VGS=-4.5V, ID=-1A
VGS=-2.5V, ID=-0.5A
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2A
■ Marking
Marking
007P F
Min Typ Max Unit
-12
V
-1 uA
±100 nA
-0.5
-1.3 V
65
100
mΩ
77
120
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