KI001P Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel Enhancement MOSFET

SMD Type
MOSFET
P-Channel Enhancement MOSFET
KI001P
■ Features
● VDS (V) =-12V
● ID =-2.8 A
● RDS(ON) ＜ 100mΩ (VGS =-4.5V)
● RDS(ON) ＜ 150mΩ (VGS =-2.5V)
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Junction Temperature
Junction and Storage Temperature Range
Symbol
Rating
Unit
VDS
-12
V
VGS
±8
ID
-2.8
A
PD
1.2
W
TJ
150
℃
Tstg
-55 to 150
1.Gate
2.Source
3.Drain
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
Test Conditions
ID=-250μA, VGS=0V
VDS=-12V, VGS=0V,Tj = 25℃
VDS=0V, VGS=±12V
VDS=VGS ID=-250μA
VGS=-4.5V, ID=-1A
VGS=-2.5V, ID=-0.5A
Min Typ Max Unit
-12 -18
V
1 μA
±100 nA
-0.4 -0.7 -1.1 V
100
mΩ
150
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