KHC2300 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Complementary Enhancement Mode MOS Transistors

SMD Type
TransistIoCrs
Complementary Enhancement
Mode MOS Transistors
KHC2300
Features
High-speed switching
No secondary breakdown.
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Ts = 80 *1
peak drain current *2
total power dissipation Ts = 80 ; *3
Tamb = 25 ; * 4
Tamb = 25 ; * 5
Tamb = 25 ; *6
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Symbol
VDSS
VGS
ID
IDM
Ptot
Tstg
Tj
Rth j-s
N-Channel P-Channel
300
-300
20
20
340
-235
14
-0.9
1.6
1.8
0.9
1.2
-55 to 150
-55 to 150
43
Unit
V
V
A
A
W
K/W
*1. Ts is the temperature at the soldering point of the drain leads.
*2. Pulse width and duty cycle limited by maximum junction temperature.
*3. Maximum permissible dissipation per MOS transistor. (So both devices may be loaded up to 1.6 W
at the same time).
*4. Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board
with an Rth a-tp (ambient to tie-point) of 27.5 K/W.
*5. Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth a-tp
(ambient to tie-point) of 90 K/W.
*6. Maximum permissible dissipation if only one MOS transistor dissipates. Value based on a printed-circuit
board with an Rth a-tp (ambient to tie-point) of 90 K/W.
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