KDW258P Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel 1.8V Specified PowerTrench MOSFET

SMD Type
ICIC
P-Channel 1.8V Specified PowerTrench MOSFET
KDW258P
Features
-9 A, -12 V. RDS(ON) = 11m @ VGS = -4.5 V
RDS(ON) = 14m @ VGS =-2.5V
RDS(ON) = 20m @ VGS =-1.8V
Rds ratings for use with 1.8 V logic
High performance trench technology for extremely low RDS(ON)
Low gate charge
Low profile TSSOP-8 package
TSSOP-8
Unit: mm
1,5,8: Drain
2,3,6,7: Source
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1)
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
Power Dissipation for Single Operation (Note 1b)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Ambient (Note 1b)
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JA
R JA
Rating
-12
8
-9
-50
1.3
0.6
-55 to 150
87
114
Unit
V
V
A
A
W
/W
/W
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