KDV303N Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – Digital FET, N-Channel

SMD Type
Digital FET, N-Channel
KDV303N
MOSFIECT
■ Features
● 0.68 A, 25 V. RDS(ON) = 0.45 Ω @ VGS = 4.5 V
RDS(ON) = 0.6Ω @ VGS = 2.7 V.
● Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5V.
● Gate-Source Zener for ESD ruggedness.
＞6kV Human Body Model
D
G
S
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1^1..^BG^asa^e te
22.ESmoituterrce
33..cDollreactionr
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current- Continuous
Drain Current- pulse
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to- Ambient
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
RθJA
Rating
25
8
0.68
2
0.35
-55 to +150
357
Unit
V
V
A
A
W
℃
℃/W
1
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