KDS9952A Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N & P-Channel Enhancement Mode Field Effect Transistor

SMD Type
TransistIoCrs
Dual N & P-Channel Enhancement Mode
Field Effect Transistor
KDS9952A
Features
N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V.
P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.
High density cell design or extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
(Note 1a)
Drain Current Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Case (Note 1)
Thermal Resistance Junction to Ambient (Note 1a)
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JC
R JA
N-Channel
P-Channel
30
-30
20
20
3.7
2.9
15
10
2
1.6
1
0.9
-55 to 150
40
78
Unit
V
V
A
A
W
/W
/W
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