KDS8958 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N & P-Channel PowerTrench MOSFET

SMD Type
TransistIoCrs
Dual N & P-Channel PowerTrench MOSFET
KDS8958
Features
N-Channel
7.0 A, 30 V RDS(ON) = 0.028 @ VGS = 10 V
RDS(ON) = 0.040 @ VGS =4.5V
P-Channel
-5 A, -30 V RDS(ON) = 0.052 @ VGS =- 10 V
RDS(ON) = 0.080 @ VGS =-4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P- Channel
Unit
Drain to Source Voltage
VDSS
30
30
V
Gate to Source Voltage
VGS
20
20
V
Drain Current Continuous (Note 1a)
Drain Current Pulsed
7
ID
20
-5
A
-20
A
Power Dissipation for Single Operation
PD
2
W
Power Dissipation for Single Operation (Note 1a)
1.6
(Note 1b)
PD
1
W
(Note 1c)
0.9
Operating and Storage Temperature
TJ, TSTG
-55 to 150
Thermal Resistance Junction to Ambient (Note 1a)
R JA
78
/W
Thermal Resistance Junction to Case (Note 1)
R JC
40
/W
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