KDS8928A Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N & P-Channel Enhancement Mode Field Effect Transistor

SMD Type
TransistIoCrs
Dual N & P-Channel Enhancement
Mode Field Effect Transistor
KDS8928A
Features
N-Channel
5.5 A, 30 V RDS(ON) = 0.030 @ VGS = 4.5V
RDS(ON) = 0.038 @ VGS =2.5V
P-Channel
-4 A, -20 V RDS(ON) = 0.055 @ VGS =- 4.5 V
RDS(ON) = 0.070 @ VGS =-2.5V
High density cell design for extremely low RDS(ON).
High power and handling capability in a widely
used surface mount package
Dual (N & P-Channel) MOSFET in surface mount package.
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Case (Note 1)
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JA
R JC
N-Channel
P- Channel
30
30
8
-8
5.5
-4
20
-20
2
1.6
1
0.9
-55 to 150
78
40
Unit
V
V
A
A
W
W
/W
/W
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