KDS3601 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 100V Dual N-Channel PowerTrench MOSFET

SMD Type
ICIC
100V Dual N-Channel PowerTrench MOSFET
KDS3601
Features
1.3 A, 100 V. RDS(ON) = 480m @ VGS = 10 V
RDS(ON) = 530m @ VGS = 6 V
Low gate charge (3.7 nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
Power Dissipation for Single Operation (Note 1b)
Power Dissipation for Single Operation (Note 1c)
Operating and Storage Temperature
Thermal Resistance Junction to Case (Note 1)
Thermal Resistance Junction to Ambient (Note 1a)
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JC
R JA
Rating
100
20
1.3
6
2
1.6
1
0.9
-55 to 175
40
78
Unit
V
V
A
A
W
/W
/W
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