KDR8702H Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – 20V N & P-Channel PowerTrench MOSFET

SMD Type
TransistIoCrs
20V N & P-Channel PowerTrench MOSFET
KDR8702H
Features
N-Ch
RDS(ON) = 54m @ VGS = 2.5 V
3.6 A, 20 V RDS(ON) = 38m @ VGS =4.5V
P-Ch
RDS(ON) = 110 m @ VGS =- 2.5 V
-2.6 A, -20 V RDS(ON) = 80 m @ VGS =-4.5V
Fast switching speed
High performance trench technology for extremely low RDS(ON)
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1a)
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Ambient (Note 1b)
Thermal Resistance Junction to Case (Note 1)
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JA
R JA
R JC
N-Channel
P- Channel
20
-20
12
8
3.6
-2.6
15
-10
0.8
-55 to 150
146
76
40
Unit
V
V
A
A
W
/W
/W
/W
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