KDD3680 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 100V N-Channel Power Trench MOSFET

SMD Type
TransistIoCrs
100V N-Channel Power Trench MOSFET
KDD3680
Features
25 A, 100 V. RDS(ON) = 46m @ VGS = 10 V
RDS(ON) = 51m @ VGS = 6 V
Low gate charge (38 nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (Note 1)
Drain Current Pulsed
Power dissipation @ TC=25 (Note 1)
Power dissipation @ Ta=25 (Note 1a)
Power dissipation @ Ta=25 (Note 1b)
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Symbol
VDSS
VGS
ID
PD
TJ, TSTG
R JC
R JA
Rating
100
20
25
100
68
3.8
1.6
-55 to 175
2.2
96
Unit
V
V
A
A
W
/W
/W
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