KDB5690 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel PowerTrenchTMMOSFET

SMD Type
TransistIoCrs
N-Channel PowerTrench^TMMOSFET
KDB5690
Features
32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V
RDS(ON) = 0.032 @ VGS = 6 V
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High performance trench technology for extremely low RDS(ON).
175 maximum junction temperature rating.
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1¹G^ga^at^te^e
2²D^dr^ra^aiⁱnⁿ
3³S^so^ou^ur^rc^ce^e
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Drain Current Pulsed
Power dissipation @ TC=25
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JC
R JA
Rating
60
20
32
100
58
0.4
-65 to 175
2.6
62.5
Unit
V
V
A
A
W
W/
/W
/W
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