KC857T Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP General Purpose Transistors

SMD Type
Transistors
PNP General Purpose Transistors
KC857T(BC857T)
Features
Low current (max. 100 mA)
Low voltage (max. 45 V).
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
2
1
Unit: mm
0.1^+0.01
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
power dissipation
Junction temperature
Storage temperature
3
0.5^+0.1
-0.1
0.3+0.25
-0.05
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-45
V
VEBO
-5
V
IC
-100
mA
ICM
-200
mA
PD
150
mW
Tj
150
Tstg
-65 to +150
1. Base
2. Emitter
3. Collecter
Electrical Characteristics Ta = 25
Parameter
collector cut-off current
emitter cut-off current
DC current gain
KC857AT
KC857BT
KC857CT
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
noise figure
transition frequency
* Pulse test: tp 300 ms;
Marking
NO.
Marking
KC857AT
3E
0.02.
KC857BT
3F
Symbol
Testconditons
Min Typ Max Unit
ICBO
IE = 0; VCB =- 30 V
IE = 0; VCB = -30 V; Tj = 150
-15 nA
-5
A
IEBO IC = 0; VEB = -5 V
-100 nA
125
250
hFE IC = -2 mA; VCE = -5 V
220
475
420
800
IC = -10 mA; IB = -0.5 mA
VCEsat
IC = -100 mA; IB =- 5 mA; *
-200 mV
-400 mV
IC = -2 mA; VCE = -5 V
VBE
IC = -10 mA; VCE = -5 V
-600
-750 mV
-820 mV
Cc IE = ie = 0; VCB = -10 V; f = 1 MHz
2.5 pF
Ce IC = ic = 0; VEB = -500 mV; f = 1 MHz
10
pF
F
IC = -200 A; VCE = -5 V; RS = 2 k ;f =
1 kHz; B = 200 Hz
10 dB
fT IC = -10 mA; VCE = -5 V; f = 100 MHz 100
MHz
KC857CT
3G
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