KC856S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP General Purpose Double Transistor

SMD Type
Transistors
PNP General Purpose Double Transistor
KC856S(BC856S)
Features
Two transistors in one package
Reduces number of components and board space
No mutual interference between the transistors.
SOT-363
1.3+0.1
-0.1
0.65
Unit: mm
0.3+0.1
-0.1
2.1+0.1
-0.1
0.1+0.05
-0.02
1 E1
2 B1
3 C2
4 E2
5 B2
6 C1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
R JA
TJ, Tstg
Rating
-80
-65
-5
-100
200
416
-65 to +150
Unit
V
V
V
mA
mW
/W
Electrical Characteristics Ta = 25
Parameter
Collector-Cutoff Current
Emitter- cutoff current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Transistion frequency
Symbol
Testconditons
ICBO
VCB =- 30 V, IE = 0
VCB =- 30 V, IE = 0, TA = 150
IEBO IC=0,VEB=-5V
hFE IC = -2.0 mA, VCE = -5.0 V
IC = -10 mA, IB =- 0.5 mA
VCE(sat)
IC = -100 mA, IB =- 5.0 mA
VBE(sat) IC = -10 mA, IB=-0.5mA
Cob VCB = -10 V, f = 1.0 MHz
fT IC = -10 mA, VCE = -5.0V,f = 100 mHz
Min Typ Max Unit
-15 nA
-5.0 A
-100 nA
110
-100 mV
-300 mV
700
mV
2.5 pF
100
MHz
Marking
Marking
5F
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