KC807A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Silicon AF Transistors

SMD Type
Transistors
PNP Silicon AF Transistors
KC807A(BC807A)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-45
V
VEBO
-5
V
IC
-500
mA
ICM
-1
A
IB
-100
mA
PD
310
mW
Tj
150
Tstg
-65 to +150
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
KC807A-16
KC807A-25
Collector saturation voltage *
KC807A-40
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
* Pulsed: PW 350 ìs, duty cycle 2%
Symbol
Testconditons
VCBO IC = -10 A, IE = 0
VCEO IC = -10 mA, IB = 0
VEBO
ICBO
IE = -10 A, IC = 0
VCB = -25 V, IE = 0
VCB = -25 V, IE = 0 , TA = 150
IEBO VEB = -4 V, IC = 0
hFE IC = -100 mA, VCE = -1 V
VCE(sat) IC = -500 mA, IB = -50 mA
VBE(sat) IC = -500 mA, IB = -50 mA
CCb VCB = -10 V, f = 1 MHz
Ceb VEB = -0.5 V, f = 1 MHz
fT IC = -50 mA, VCE = -5 V, f = 100 MHz
Marking
NO.
Marking
KC807A-16
5A
KC807A-25
5B
KC807A-40
5C
Min Typ Max Unit
-50
V
-45
V
-5
V
-100 nA
-50
A
-100 nA
100 160 250
160 250 400
250 350 630
-0.7 V
-1.2 V
10
pF
60
pF
200
MHz
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