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IRLML6402 Datasheet, PDF (1/6 Pages) International Rectifier – HEXFET Power MOSFET | |||
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SMD Type
MOSFET
P-Channel Enhancement MOSFET
IRLML6402 (KRLML6402)
â Features
â Ultra low on-resistance.
â P-Channel MOSFET.
â SOT-23 Footprint.
â Low profile(ï¼1.1mm).
â Available in tape and reel.
â Fast switching.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
11.. BGasaete
22..ESmiotutrecre
33..cDolraleicntor
â Absolute Maximum Ratings Ta = 25â
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current VGS=4.5V @ TA=25â
Continuous Drain Current VGS=4.5V@ TA=70â
Pulsed Drain Current
a
Power Dissipation
@ TA=25â
Power Dissipation
@ TA=70â
Single Pulse Avalanche Energy
b
Thermal Resistance.Junction- to-Ambient
Linera Derating Factor
Junction Temperature
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
RthJA
TJ
Tstg
Rating
-20
±12
-3.7
-2.2
-30
1.3
0.8
11
100
0.01
150
-55 to 150
Notes:
a.Repetitive Rating :Pulse width limited by maximum junction temperature
b.Starting TJ=25â, L=1.65mH, RG=25Ω, IAS=-3.7A
Unit
V
A
W
mJ
â/W
W/â
â
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