IRLML6401 Datasheet, PDF (1/6 Pages) International Rectifier – HEXFET Power MOSFET

SMD Type
P-Channel Enhancement MOSFET
IRLML6401 (KRLML6401)
MOSFET
■ Features
● Ultra low on-resistance.
● P-Channel MOSFET.
● Fast switching.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1^1.. ^BG^asa^ete
22..ESmiotutrecre
33..cDolraleicntor
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current VGS=4.5V @ TA=25℃
Continuous Drain Current VGS=4.5V@ TA=70℃
Pulsed Drain Current a
Power Dissipation
@ TA=25℃
Power Dissipation
@ TA=70℃
Single Pulse Avalanche Energy b
Thermal Resistance.Junction- to-Ambient
Linera Derating Factor
Junction Temperature
Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
RthJA
TJ
Tstg
Rating
-12
±8
-4.3
-3.4
-34
1.3
0.8
33
100
0.01
150
-55 to 150
Notes:
a.Repetitive Rating :Pulse width limited by maximum junction temperature
b.Starting TJ=25℃, L=3.5mH, RG=25Ω, IAS=-4.3A
Unit
V
A
W
mJ
℃/W
W/℃
℃
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