IRF9530 Datasheet, PDF (1/3 Pages) Samsung semiconductor – P-CHANNEL POWER MOSFETS

DIP Type
MOSFET
P-Channel MOSFET
IRF9530 (KRF9530)
TO-220
9.90 ± 0.20
(8.70)
ø3.60 ± 0.10
4.50 ± 0.20
1.30
+0.10
–0.05
■ Features
● VDS (V) =-100V
● ID =-13 A (VGS =-10V)
● RDS(ON) ＜ 205mΩ (VGS =-10V)
● RDS(ON) ＜ 300mΩ (VGS =-4.5V)
■ Absolute Maximum Ratings Ta = 25℃
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP
[2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP
[2.54 ± 0.20 ]
10.00 ± 0.20
0.50
+0.10
–0.05
2.40 ± 0.20
1 GATE
2 DRAIN
3 SOURCE
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Tc = 25℃
Junction Temperature
Junction Storage Temperature Range
Symbol
Rating
Unit
VDS
-100
V
VGS
±25
ID
-13
A
IDM
-32
PD
50
W
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
Gate Threshold Voltage
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Diode Forward Voltage
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VSD
Test Conditions
ID=-250μA, VGS=0V
VDS=-80V, VGS=0V
VDS=-80V, VGS=0V, TJ=85℃
VDS=0V, VGS=±16V
VDS=VGS ID=-250μA
VGS=-10V, ID=-7.8A (Note.1)
VGS=-4.5V, ID=-6A (Note.1)
VGS=0V, VDS=-30V, f=1MHz
VGS=-10V, VDS=-50V, ID=-7.8A
VGS=-10V, VDS=-50V,
RL=15Ω,RG=6Ω,ID=-1A
IF=-4A, dI/dt=100A/μs
IS=-1A,VGS=0V (Note.1)
Min Typ Max Unit
-100
V
-0.1
uA
-30
±10 uA
-1.2
-3
V
205
mΩ
300
1050
70
pF
40
20.9 38
4.2
nC
5.2
21
19
100 ns
55
16
-1.1 V
Note.1: Pulse test ; pulse width ≦ 300ns, duty cycle ≦ 2%.
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