IRF730S Datasheet, PDF (1/5 Pages) International Rectifier – HEXFET POWER MOSFET

SMD Type
N-Channel MOSFET
IRF730S (KRF730S)
MOSFET
■ Features
● VDS (V) =400V
● ID = 5.5 A (VGS = 10V)
● RDS(ON) ＜ 1Ω (VGS = 10V)
● Fast switching
● Low thermal resistance
d
g
s
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Tc = 25℃
Tc = 100℃
Pulsed Drain Current
Avalanche Current
Power Dissipation
Non-Repetitive Avalanche Energy (Note.1)
Tc = 25℃
Ta = 25℃
Repetitive Avalanche Energy (Note.2)
Peak Diode Recovery dv/dt
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Ambient (PCB mount)
Thermal Resistance Junction to Mounting Base
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
PD
EAS
EAR
dv/dt
RthJA
RthJB
TJ
Tstg
Note.1: VDD= 50V, starting TJ =25°C, L=16mH, Rg =25Ω, IAS = 5.5 A
Note.2: ISD≤5.5 A, dI/dt≤ 90A/μs, VDD≤ V(BR)DSS, TJ≤ 150 °C.
Rating
400
±20
5.5
3.5
22
5.5
74
3.1
290
7.4
4
62
40
1.7
150
-55 to 150
Unit
V
A
W
mJ
V/ns
℃/W
℃
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