IRF7205 Datasheet, PDF (1/5 Pages) International Rectifier – HEXFET Power MOSFET

SMD Type
P-Channel MOSFET
IRF7205 (KRF7205)
■ Features
● VDS (V) =-30V
● ID =-4.6 A (VGS =-10V)
● RDS(ON) ＜ 70mΩ (VGS =-10V)
● RDS(ON) ＜ 130mΩ (VGS =-4.5V)
● Fast Switching
S
1
S
2
S
3
G
4
8
A
D
7
D
6
D
5
D
SOP-8
MOSFET
1.50 0.15
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
@ Ta = 25℃
@ Ta = 70℃
Pulsed Drain Current
(Note.1)
Power Dissipation
@ Tc = 25℃
Peak Diode Recovery dv/dt (Note.2)
Thermal Resistance.Junction- to-Ambient (Note.3)
Junction Temperature
Junction Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
dv/dt
RthJA
TJ
Tstg
Rating
-30
±12
-4.6
-3.7
-15
2.5
-3
50
150
-55 to 150
Note.1: Repetitive rating; pulse width limited by max. junction temperature.
Note.2: ISD ≤ -4.6A, di/dt ≤ 90A/us, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Note.3: Surface mounted on FR-4 board, t ≤ 10sec.
Unit
V
A
W
V/ns
℃/W
℃
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