IRF630S Datasheet, PDF (1/4 Pages) STMicroelectronics – N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET

SMD Type
N-Channel MOSFET
IRF630S (KRF630S)
MOSFET
■ Features
● VDS (V) = 200V
● ID = 9 A (VGS = 10V)
● RDS(ON) ＜ 400mΩ (VGS = 10V)
● Fast switching
● Low thermal resistance
d
g
s
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Peak Non-Repetitive Avalanche Current
Power Dissipation
Non-Repetitive Avalanche Energy
Thermal Resistance.Junction- to-Ambient
Thermal Resistance Junction to Mounting Base
Junction Temperature
Storage Temperature Range
Ta = 25℃
Ta = 100℃
Symbol
VDS
VDG
VGS
ID
IDM
IAS
PD
EAS
RthJA
RthJB
TJ
Tstg
Rating
200
200
±20
9
6.3
36
9
88
250
50
1.7
175
-55 to 175
Unit
V
A
W
mJ
℃/W
℃
www.kexin.com.cn ¹