IRF1404Z Datasheet, PDF (1/6 Pages) International Rectifier – Advanced Process Technology

DIP Type
N-Channel MOSFET
IRF1404Z (KRF1404Z)
■ Features
● VDS (V) = 40V
● ID = 75 A (VGS = 10V)
● RDS(ON) ＜ 3.7mΩ (VGS = 10V)
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
TO-220
9.90 ± 0.20
(8.70)
ø3.60 ± 0.10
1.27 ± 0.10
1.52 ± 0.10
123
2.54TYP
[2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP
[2.54 ± 0.20 ]
10.00 ± 0.20
MOSFET
4.50 ± 0.20
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.40 ± 0.20
1 GATE
2 DRAIN
3 SOURCE
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
(Package Limited) Tc=25℃
Continuous Drain Current (Silicon Limited) Tc=25℃
Tc=100℃
Pulsed Drain Current
Avalanche Curren
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Tc=25℃
(PCB Mount)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
EAR
EAS
PD
RthJA
RthJC
TJ
Tstg
Rating
40
±20
75
180
120
710
See Fig.12a, 12b, 15, 16
330
480
200
62
40
0.75
175
-55 to 175
Unit
V
A
mJ
W
℃/W
℃
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