HVU131 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Switching

SMD Type
Silicon Epitaxial Planar Pin Diode
HVU131
Diodes
Features
Low capacitance.(C=0.8pF max)
Low forward resistance. (rf=1.0 max)
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
A b s o lu te M a x im u m R a tin g s T a = 2 5
P aram eter
P eak reverse voltage
R everse voltage
Forward current
P ow er dissipation
Junction tem perature
S torage tem perature
Sym bol
VRM
VR
IF
Pd
Tj
T stg
V alue
65
60
100
150
125
-55 to +125
U nit
V
V
mA
mW
Electrical Characteristics Ta = 25
P aram eter
Reverse current
Reverse voltage
Capacitance
Forward resistance
Symbol
IR
VF
C
rf
Conditions
VR = 60 V
IR = 10 mA
VR = 1 V, f = 1 MHz
IF = 10 mA, f = 100 MHz
Min
Typ
Max
Unit
0.1
A
1.0
V
0.8
pF
1.0
Marking
Marking
P1
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