HVC135 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Epitaxial Trench Pin Diode for Antenna Switching

SMD Type
Silicon Epitaxial Trench Pin Diode
HVC135
Diodes
Features
Adopting the trench structure improves low capacitance.(C=0.6pF max)
Low forward resistance. (rf=2.0 max)
Low operation current.
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
A bsolute M axim um R atings T a = 25
Param eter
P eak reverse voltage
R everse voltage
Forward current
P ower dissipation
Junction tem perature
Storage tem perature
Sym bol
VRM
VR
IF
Pd
Tj
T stg
V alue
65
60
100
150
125
-55 to +125
U nit
V
V
mA
mW
Electrical Characteristics Ta = 25
P aram eter
Reverse current
Reverse voltage
Capacitance
Forward resistance
ESD-Capability *1
Symbol
IR
VF
C
rf
Conditions
VR = 60 V
IF = 2 mA
VR = 1 V, f = 1 MHz
IF = 2 mA, f = 100 MHz
C =200pF, Both forward and
reverse direction 1 pulse
Note
1. Failure criterion ; IR > 100 nA at VR = 60V.
Min
Typ
Max
Unit
0.1
A
0.9
V
0.6
pF
2.0
100
V
Marking
Marking
P5
www.kexin.com.cn ¹