HVC134 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Switching

SMD Type
Silicon Epitaxial Planar Pin Diode
HVC134
Diodes
Features
Low capacitance.(C=0.4pF max)
Low forward resistance. (rf=2.0 max)
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute M axim um R atings T a = 25
Param eter
Peak reverse voltage
Reverse voltage
Forward current
Power dissipation
Junction tem perature
Storage tem perature
Sym bol
VRM
VR
IF
Pd
Tj
T stg
V a lu e
65
60
100
150
125
-55 to +125
U n it
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Reverse current
Reverse voltage
Capacitance
Forward resistance
Symbol
IR
VF
C
rf
Conditions
VR = 60 V
IF = 10 mA
VR = 1 V, f = 1 MHz
IF = 10 mA, f = 100 MHz
Min
Typ
Max
Unit
0.1
A
1.0
V
0.4
pF
2.0
ESD-Capability *1
C =100pF, R = 1.5K , Both forward and
200
V
reverse direction 5 pulse
Note
1. Failure criterion ; IR > 0.1 A at VR = 60V.
Marking
Marking
P4
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