HVC131 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Pin Diode for High Frequency Switching

SMD Type
Silicon Epitaxial Planar Pin Diode
HVC131
Diodes
Features
Low capacitance.(C=0.8pF max)
Low forward resistance. (rf=1.0 max)
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
A bsolute M axim um R atings T a = 25
Param eter
P eak reverse voltage
R everse voltage
Forward current
P ower dissipation
Junction tem perature
Storage tem perature
Sym bol
VRM
VR
IF
Pd
Tj
T stg
V alue
65
60
100
150
125
-55 to +125
U nit
V
V
mA
mW
Electrical Characteristics Ta = 25
Param eter
Reverse current
Reverse voltage
Capacitance
Forward resistance
Sym bol
Test Condition
M in
Typ
Max
Unit
IR
VR = 60 V
0.1
A
VF
IF = 10 m A
1.0
V
C
VR = 1 V, f = 1 MHz
0.8
pF
rf
IF = 10 m A, f = 100 MHz
1.0
Marking
Marking
P1
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