HSU88 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Various Detector, Mixer

SMD Type
Silicon Schottky Barrier Diode
HSU88
Diodes
Features
Low capacitance. (C=0.8pF max)
Low forward voltage.
Ultra small Resin Package (URP) is suitablefor high density surface
mounting and high speed assembly.
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1^+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
A b so lu te M a xim u m R a tin g s T a = 2 5
P aram eter
R everse V oltage
A verage rectified current
Junction tem perature
S torage tem perature
Sym bol
VR
IO
Tj
T stg
V alue
10
15
125
-55 to +125
U nit
V
mA
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
IF = 1 mA
350
Forward voltage
VF
IF = 10 mA
500
420
mV
580
VR = 2 V
Reverse current
IR
VR = 10 V
0.2
A
10
Capacitance
C
VR =0 V, f = 1 MHz
0.8
pF
C = 200pF , Both forward and
ESD-Capability (Note 1)
30
V
reverse direction 1 pulse.
Note
1. Failure criterion ; IR 400 nA at VR =2 V
Marking
Marking
9
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