HSM88ASR Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Balanced Mixer

SMD Type
Silicon Schottky Barrier Diode
HSM88ASR
Diodes
Features
Proof against high voltage.
MPAK package is suitable for high density surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
A bsolute M axim um R atings T a = 25
P aram eter
R everse voltage
A verage rectified current
Junction tem perature
S torage tem perature
Sym bol
VR
IO
Tj
T stg
V alue
10
15
125
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Forward voltage
VF
IF = 1 mA
IF = 10 mA
VR = 2 V
Reverse current
IR
VR = 10 V
Capacitance
C
VR =0 V, f = 1 MHz
Capacitance deviation
ÄC
VR =0 V, f = 1 MHz
Forward voltage deviation
ÄVF
IF = 10 mA
ESD-Capability (Note 1)
C=200pF , Both forward and
reverse direction 1 pulse.
Note
1. Failure criterion ; IR 400nA at VR =2 V
U nit
V
mA
1.Base
2.Emitter
3.collector
Min
Typ
Max
Unit
350
420
mV
500
580
0.2
A
10
0.85
pF
0.10
pF
10
mV
30
V
Marking
Marking
C3
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