HSM88AS Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Balanced Mixer

SMD Type
Silicon Schottky Barrier Diode
HSM88AS
Diodes
Features
Proof against high voltage.
MPAK package is suitable for high density surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
A b so lu te M a xim u m R a tin g s T a = 2 5
P aram eter
R e ve rse vo lta g e
A ve ra g e re ctifie d cu rre n t
Ju n ctio n te m p e ra tu re
S torage tem perature
Sym bol
VR
IO
Tj
T stg
V a lu e
10
15
125
-55 to +125
U n it
V
mA
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance
C
Capacitance deviation
ÄC
Forward voltage deviation
ÄVF
ESD-Capability (Note 1)
Note
1. Failure criterion ; IR
400nA at VR =2 V
Conditions
IF = 1 mA
IF = 10 mA
VR = 2 V
VR = 10 V
VR =0 V, f = 1 MHz
VR =0 V, f = 1 MHz
IF = 10 mA
C=200pF , Both forward and
reverse direction 1 pulse.
Min
Typ
Max
Unit
350
420
mV
500
580
0.2
A
10
0.85
pF
0.10
pF
10
mV
30
V
Marking
Marking
C1
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