HSM83 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for High Voltage Switching

SMD Type
Switching Diodes
HSM83 (KSM83)
■ Features
● High reverse voltage. (VR = 250V)
● Silicon Epitaxial Planar Diode for High Voltage Switching
3
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
1
2
Diodes
Unit: mm
0.1 +0.05
-0.01
1 Anode
2 NC
3 Cathode
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Peak Reverse Voltage
DC Blocking Voltage
VRM
300
V
VR
250
Average Rectified Output Current
Peak Forward Surge Current
Io
100
mA
IFM
300
Non-Repetitive Peak Forward Surge Current (Note.1)
IFSM
2
A
Junction Temperature
Storage Temperature range
TJ
125
℃
Tstg
-55 to 125
Note.1: Value at duration of 10msec.
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Capacitance between terminals
Reverse recovery time
Symbol
Test Conditions
VR IR= 100 uA
VF IF= 100 mA
IR1 VR=250 V
IR2 VR=300 V
CT VR= 0 V, f= 1 MHz
trr
IF=IR=30mA,Irr=3mA, RL=100Ω
Min Typ Max Unit
300
V
1.2
0.2
uA
100
1.5 3
pF
100 ns
■ Marking
Marking
F7
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