HSM276S Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Balanced Mixer

SMD Type
Silicon Schottky Barrier Diode
HSM276S
Diodes
Features
High forward current, Low capacitance.
HSM276ASR which is interconnected in series configuration
is designed for balanced mixer use.
MPAK package is suitable for high density surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
A b so lu te M a xim u m R a tin g s T a = 2 5
P aram eter
R everse voltage
A verage rectified current
Junction tem perature
S torage tem perature
Sym bol
VR
IO
Tj
T stg
V alue
3
30
125
-55 to +125
U nit
V
mA
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Reverse voltage
VR
IR =1.0 mA
3
Reverse current
IR
VR =0. 5 V
Forward current
IF
VR =0. 5 V
35
Capacitance
C
VR = 0.5V, f = 1 MHz
Capacitance deviation
ÄC
VR = 0.5V, f = 1 MHz
ESD-Capability (Note 1)
C=200pF, R= 0 Both forward and
30
reverse direction 1 pulse.
Note
1. Failure criterion ; IR 100 A at VR =0.5 V
Typ
Max
Unit
V
50
A
mA
0.90
pF
0.10
pF
V
Marking
Marking
C2
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