HSM2693A Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for Tuner Band Switch

SMD Type
Silicon Epitaxial Planar Diode
HSM2693A
Diodes
Features
Low forward resistance. (rf = 0.9 max)
Low capacitance. (C = 1.2pFmax)
MPAK package is suitable for high density surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
A bsolute M axim um R atings T a = 25
P aram eter
R everse V oltage
P ow er dissipation
Junction tem perature
S torage tem perature
O peration tem perature
Sym bol
VR
Pd
Tj
T stg
Topr
V alue
35
150
125
-45 to +125
-20 to +60
U nit
V
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
P aram eter
Reverse voltage
Reverse current
Forward voltage
C a p a c ita n c e
Forward resistance
Symbol
C o n d itio n s
M in
Typ
Max
U n it
VR
IR = 10 A
35
V
IR
VR = 25 V
50
nA
VF
IF = 10 mA
1.0
V
C
VR = 6 V, f = 1 MHz
1.2
pF
rf
IF = 2 mA, f = 100 MHz
0.9
Marking
Marking
B4
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