HSC276 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Mixer

SMD Type
Silicon Schottky Barrier Diode
HSC276
Diodes
Features
High forward current, Low capacitance.
Ultra small Flat Package (UFP) is suitable for surface mount design.
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
A bsolute M axim um R atings T a = 25
P aram eter
R everse V oltage
A verage rectified current
Junction tem perature
S torage tem perature
Sym bol
VR
IO
Tj
T stg
V alue
3
30
125
-55 to +125
U nit
V
mA
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
M in
Reverse voltage
VR
IR = 10 A
30
Reverse current
IR
VR = 0.5 V
Forward voltage
IF
VR = 0.5 V
35
Capacitance
C
VR = 0.5 V, f = 1 MHz
ESD-Capability (Note 1)
C=200pF , Both forward and
30
reverse direction 1 pulse.
Note
1. Failure criterion ; IR 100mA at VR =0.5 V
Typ
Max
Unit
V
0.5
A
mA
0.85
pF
V
Marking
Marking
C2
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