HSC226 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode

SMD Type
Silicon Schottky Barrier Diode
HSC226
Diodes
Features
Low reverse current, Low capacitance.
Ultra small Flat Package (UFP) is suitable for surface mount design.
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
P aram eter
Repetitive peak reverse voltage
Non-Repetitive peak forward surge current
Forward current
Junction temperature
Storage temperature
Note
10ms Sinewave 1pulse
Symbol
VRRM
IFSM*
IF
Tj
Tstg
Value
25
200
50
125
-55 to +125
Unit
V
mA
mA
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance
C
Conditions
IF = 1 mA
IF = 5 mA
VR = 20 V
VR =1 V, f = 1 MHz
M in
Typ
Max
Unit
0.33
V
0.38
0.45
A
2.80
pF
Marking
Marking
S4
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