HSC119 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for High Speed Switching

SMD Type
High Speed Switching Diodes
HSC119 (KSC119)
Diodes
Features
● Low capacitance. (C = 2.0 pF max)
● Short reverse recovery time. (trr = 3.0 ns max)
● Ultra small Flat Package (UFP) is suitable for surface mount design.
SOD-523
1.2 +0.1
-0.1
+
Unit:mm
0.6 ^+0.1
-0.1
-
1.6 +0.1
-0.1
0.77max
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Reverse voltage
Forward current
Peak forward surge current
Junction Temperature
Storage temperature range
Symbol
Rating
Unit
VRM
85
V
IF
100
mA
IFM
300
TJ
125
℃
Tstg
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Symbol
Test Conditions
VR IR= 100 uA
VF1 IF= 10mA
VF2 IF= 100mA
IR1 VR= 80V
Cj VR= 0V, f= 1 MHz
trr IF=10mA, VR=6V,RL=50Ω
Min Typ Max Unit
85
0.8 V
1.2
0.1 uA
2
pF
3 ns
Marking
Marking
A
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