HSB88WA Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING

SMD Type
Silicon Schottky Barrier Diode
HSB88WA
Diodes
Features
Low reverse current, Low capacitance.
CMPAK package is suitable for high density surface mounting and high speed assembly.
A bsolute M axim um R atings T a = 25
P aram eter
R everse voltage
A verage rectified current
Junction tem perature
S torage tem perature
Sym bol
VR
IO
Tj
T stg
V alue
10
15
125
-55 to +125
U nit
V
mA
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF =1 mA
IF =10 mA
0.35
0.50
0.42
V
0.58
Reverse current
IR
VR =2 V
VR =10 V
0.2
A
10
Capacitance
C
VR = 0 V, f = 1 MHz
0.80
pF
Capacitance deviation
ÄC
VR = 0V, f = 1 MHz
0.10
pF
Forward voltage deviation
ÄVF
IF = 10 mA
10
mV
C=200 pF, R= 0 Both forward and
ESD-Capability (Note 1)
30
V
reverse direction 1 pulse.
Note
1. Failure criterion ; IR 0.4 A at VR =2 V
Marking
Marking
C7
www.kexin.com.cn ¹