HRW0503A Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

SMD Type
Silicon Schottky Barrier Diode
HRW0503A
Diodes
Features
Low forward voltage drop and suitable for
high effifiency rectifying.
MPAK package is suittable for high density
surface mounting and high speed assembly.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute M axim um R atings T a = 25
Param eter
Repetitive peak reverse voltage
Average rectified current
Non-repetitive peak forward surge current
Junction tem perature
Storage tem perature
N o te
1. 50Hz sine wave 1 pulse
Sym bol
VRRM
IO
IFSM (Not e 1)
Tj
T stg
V a lu e
30
500
5
125
-55 to + 125
U n it
V
mA
A
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Capacitance
Sym bol
VF
IR
C
Conditions
IF = 500 mA
VR = 30 V
VR = 0 V, f = 1MHz
Min
Typ
Max
Unit
0.55
V
50
A
65
pF
Marking
Marking
S6
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