HN1A01FU_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
HN1A01FU (KN1A01FU )
Transistors
■ Features
● High voltage and high current
● High hFE: hFE = 120~400
● Excellent hFE linearity
● Small package (Dual type)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-50
VCEO
-50
V
VEBO
-5
IC
-150
mA
IB
-30
PC
200
mW
TJ
125
℃
Tstg
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -50 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-100 mA, IB=-10mA
VBE(sat) IC=-100 mA, IB=-10mA
hFE VCE= -6V, IC= -2mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -10V, IC= -1mA
■ Classification of hfe
Type
HN1A01FU-Y
Range
120-240
Marking
D1Y
HN1A01FU-G
200-400
D1G
Min Typ Max Unit
-50
-50
V
-5
-100
nA
-100
-0.3
V
-1.2
120
400
7 pF
80
MHz
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