FZT949 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Silicon Planar High Current (High Performance) Transistor

SMD Type
Transistors
PNP Silicon Planar High Current
(High Performance) Transistor
FZT949
Features
Extremely low equivalent on-resistance; RCE(sat).
6 Amps continuous current.
Up to 20 Amps peak current.
Very low saturation voltage.
Excellent hFE characteristics specified upto 20 Amps.
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50^+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 base
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-30
V
VEBO
-6
V
ICM
-20
A
Peak pulse current
Power dissipation
Operating and storage temperature range
IC
-5.5
A
Ptot
3
W
Tj,Tstg
-55 to +150
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