FZT649_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
NPN Transistors
FZT649 (KZT649)
■ Features
● Collector Current Capability IC=3A
● Collector Emitter Voltage VCEO=25V
● Low saturation voltage
● Complementary to FZT749
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter turn on voltage
DC current gain
(Note.1)
Switching Times
Collector output capacitance
Transition frequency
Note.1:Pulse Width=300us. Duty cycle ≤2%
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
35
25
5
3
8
2
150
-55 to 150
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
Unit
V
A
W
℃
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 10 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO
VCB= 30 V , IE= 0
VCB= 30 V , IE= 0 , Ta = 100℃
IEBO VEB= 4V , IC=0
IC=1 A, IB=100mA
VCE(sat)
IC=3 A, IB=300mA
(Note.1)
(Note.1)
VBE(sat) IC=1 A, IB=100mA
(Note.1)
VBE(on) VCE= 2V, IC= 1 A
hFE(1) VCE= 2V, IC= 50mA
hFE(2) VCE= 2V, IC= 1 A
hFE(3) VCE= 2V, IC= 2 A
hFE(4) VCE= 2V, IC= 6 A
ton
IC=500mA, VCC=10V
toff
IB1=IB2=50mA
Cob VCB= 10V, f=1MHz
fT
VCE= 5V, IC= 100mA,f=100MHz
Min Typ Max Unit
35
25
V
5
0.1
10 uA
0.1
0.3
0.6
V
1.25
1
70
100
300
75
15
55
ns
300
50 pF
150
MHz
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