FZT589_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
FZT589 (KZT589)
SOT-223
6.50±0.2
3.00±0.1
Unit:mm
■ Features
● Collector Current Capability IC=-1A
● Collector Emitter Voltage VCEO=-30V
● Complementary to FZT489
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature range
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-Emitter Turn-On Voltage
DC current gain
(Note.1)
Collector output capacitance
Transition frequency
4
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
Tstg
Rating
-50
-30
-5
-1
-2
-200
2
150
-55 to 150
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
Unit
V
A
mA
W
℃
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -30 V , IE=0
ICES VCES =-30V,IB=0
IEBO VEB= -4V , IC=0
IC=-1 A, IB=-100mA (Note.1)
VCE(sat)
IC=-2 A, IB=-200mA (Note.1)
VBE(sat) IC=-1 A, IB=-100mA (Note.1)
VBE(on) VCE= -2V, IC= -1A (Note.1)
hFE(1) VCE= -2V, IC= -1mA
hFE(2) VCE= -2V, IC= -500mA
hFE(3) VCE= -2V, IC= -1 A
hFE(4) VCE= -2V, IC= -2 A
Cob VCB= -10V, f=1MHz
fT VCE= -5V, IC= -100mA,f=100MHz
Min Typ Max Unit
-50
-30
V
-5
-0.1
-0.1 uA
-0.1
-0.35
-0.65
V
-1.2
-1.1
100
100
300
80
40
15 pF
100
MHz
Note.1: Pulse width=300us. Duty cycle ≤ 2%
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