FZT489_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
FZT489 (KZT489)
SOT-223
6.50±0.2
3.00±0.1
Unit:mm
■ Features
● Collector Current Capability IC=1A
● Collector Emitter Voltage VCEO=30V
● Complementary to FZT589
4
1
2
3
2.30 (typ)
0.250
Gauge Plane
■ Absolute Maximum Ratings Ta = 25℃
4.60 (typ)
0.70±0.1
1.Base
2.Collector
3.Emitter
4.Collector
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
■ Electrical Characteristics Ta = 25℃
Symbol
Rating
Unit
VCBO
50
VCEO
30
V
VEBO
5
IC
1
A
ICP
4
IB
200
mA
PC
2
W
TJ
150
℃
Tstg
-55 to 150
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-Emitter Turn On Voltage
DC current gain
(Note.1)
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 10 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 30 V , IE= 0
ICES VCES= 30 V
IEBO VEB= 4V , IC=0
IC=1 A, IB=100mA (Note.1)
VCE(sat)
IC=2 A, IB=200mA (Note.1)
VBE(sat) IC=1 A, IB=100mA (Note.1)
VBE(on) VCE= 2V, IC= 1A (Note.1)
hFE(1) VCE= 2V, IC= 1mA
hFE(2) VCE= 2V, IC= 1A
hFE(3) VCE= 2V, IC= 2A
hFE(4) VCE= 2V, IC= 4A
Cob VCB= 10V, f=1MHz
fT VCE= 10V, IC= 50mA,f=100MHz
Min Typ Max Unit
50
30
V
5
100
100 nA
100
0.3
0.6
V
1.1
1
100
100
300
60
20
10 pF
150
MHz
Note.1: Pulse width=300us. Duty cycle ≤ 2%
www.kexin.com.cn ¹