FQD12P10 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – 100V P-Channel MOSFET

SMD Type
P-Channel MOSFET
FQD12P10 (KQD12P10)
MOSFET
■ Features
● VDS (V) =-100V
● ID =-9.4 A (VGS =-10V)
● RDS(ON) ＜ 290mΩ (VGS =-10V)
D
● Low gate charge
● Low Crss
● Fast switching
G
S
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Single Pulsed Avalanche Energy (Note.1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt (Note.2)
Power Dissipation
Power Dissipation - Derate above 25°C
Thermal Resistance.Junction- to-Ambient
Tc = 25°C
Tc = 100°C
Ta = 25°C
Tc = 25°C
(Note.3)
Thermal Resistance, Junction-to-Case
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Junction Temperature
Junction Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAR
EAS
EAR
dv/dt
PD
RthJA
RthJC
TL
TJ
Tstg
Rating
-100
±30
-9.4
-6
-37.6
-9.4
370
5
-6
2.5
50
0.4
50
110
2.5
300
150
-55 to 150
Note.1: L = 6.3mH, IAS = -9.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
Note.2: ISD ≤ -11.5A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
Note.3: When mounted on the minimum pad size recommended (PCB Mount)
Unit
V
A
mJ
V/ns
W
W/℃
℃/W
℃
Unit: mm
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