FMS4_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
FMS4 (KMS4)
SOT-153 ( SOT-23-5 )
0.4+0.1
-0.1
■ Features
● Collector Current Capability IC=-50mA
● Collector Emitter Voltage VCEO=-120V
● High breakdown voltage.
5
4
5
4
1
2
3
+0.01
-0.01
+0.2
-0.1
Unit: mm
0.15 ^+0.02
-0.02
12 3
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
Rating
Unit
VCBO
-120
VCEO
-120
V
VEBO
-5
IC
-50
mA
PC
300
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -100 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-10 mA, IB=-1mA
VBE(sat) IC=-10 mA, IB=-1mA
hFE VCE= -6V, IC= -2mA
fT
VCE= -12V, IE= 2mA,f=100MHz
■ Marjking
Marking
S4
Min Typ Max Unit
-120
-120
V
-5
-0.5
uA
-0.5
-0.5
V
-1.2
180
820
140
MHz
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