FMMT617TA Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon Power Transistor

SMD Type
Transistors
NPN Silicon Power Transistor
FMMT617TA
■ Features
● Power Dissipation: Ptot=625mW
● Collector Current: IC=3A
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current *1
Power Dissipation at Tamb =25℃*2
Operating and Storage Temperature Range
Symbol
Rating
Unit
VCBO
15
V
VCEO
15
V
VEBO
5
V
IC
3
A
ICM
12
A
Ptot
625
mW
Tj:Tstg
-55 to +150
℃
*1. Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2%
*2.Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
1
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