FMMT589 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

SMD Type
TransistIoCrs
Power High Performance Transistor
FMMT589
Features
Low equivalent on-resistance.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-30
V
VEBO
-5
V
ICM
-2
A
IC
-1
A
IB
-200
mA
Ptot
500
mW
Tj,Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Static Forward Current TransferRatio
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
589
Symbol
Testconditons
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
ICBO VCB=-30V
IEBO VEB=-4V
VCE(sat) IC=-1A,IB=-100mA
VBE(sat) IC=-1A,IB=-100mA
VBE(ON) IC=-1A,VCE=-2V
IC=-1mA, VCE=-2V*
IC=-500mA,VCE=-2V*
hFE
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
fT IC=-100mA,VCE=-5V,f=100MHz
Cobo VCB=-10V,f=1MHz
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-50
V
-30
V
-5
V
-100 nA
-100 nA
-0.35 V
-1.2 V
-1.1 V
100
100
300
80
40
100
MHz
15 pF
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