FMMT497 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR

SMD Type
Transistors
High Voltage High Performance Transistor
FMMT497
Features
SOT23 NPN silicon planar
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Power dissipation
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Collector Cut-Off Current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Static Forward Current Transfer Ratio
Transition Frequency
Collector-Base Breakdown Voltage
* Pulse test: tp = 300 ìs; d 0.02.
Marking
Marking
497
Symbol
Rating
Unit
VCBO
300
V
VCEO
300
V
VEBO
5
V
IC
500
mA
ICM
1
A
IB
200
mA
Ptot
500
mW
Tj,Tstg
-55 to +150
Symbol
Testconditons
V(BR)CBO _IC=100ìA
V(BR)CEO _IC=10mA
V(BR)EBO _IE=100ìA
ICBO _VCB=250V
ICES _VCE=250V
IEBO _VEB=4V
VCE(sat) ^{IC=100mA,IB=10mA}
IC=250mA,IB=25mA
VBE(sat) _{IC=250mA,IB=25mA}
VBE(ON) _{IC=250mA,VCE=10V}
IC=1mA, VCE=10V
hFE _{IC=100mA, VCE=10V*}
fT
Cobo
IC=250mA, VCE=10V*
IC=50mA,VCE=10V,f=100MHz
VCB=10V,f=1MHz
1.Base
2.Emitter
3.collector
Min Typ Max Unit
300
V
300
V
5
V
100 nA
100 nA
100 nA
0.2
0.3
V
1.0 V
1.0 V
100
80
300
20
75
MHz
5 pF
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