FMMT493_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
FMMT493 (KMMT493)
■ Features
● Collector Current Capability IC=1A
● Collector Emitter Voltage VCEO=100V
● Complementary to FMMT593
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
Tstg
Rating
120
100
5
1
2
0.2
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter turn-on voltage
DC current gain (Note.1)
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 10 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 100 V , IE= 0
ICES VCE= 100 V , IE= 0
IEBO VEB= 4V , IC=0
IC=500 mA, IB=50mA
VCE(sat)
IC=1 A, IB=100mA
VBE(sat) IC=1 A, IB=100mA
VBE(on) VCE= 10V, IC= 1 A
VCE= 10V, IC= 1mA
VCE= 10V, IC= 250mA
hFE
VCE= 10V, IC= 500mA
VCE= 10V, IC= 1 A
Cob VCB= 10V, f=10MHz
fT VCE= 10V, IC= 50mA,f=100MHz
Note.1: Pulse width=300us. Duty cycle ≤ 2%
■ Marking
Marking
493
Unit
V
1.Base
2.Emitter
3.collector
A
mW
℃
Min Typ Max Unit
120
100
V
5
100
100 nA
100
0.3
0.6
V
1.15
1
100
100
300
60
20
10 pF
150
MHz
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