FDT86244 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET

SMD Type
N-Channel Enhancement MOSFET
FDT86244
MOSFET
■ Features
● VDS (V) = 150V
● ID = 2.8 A (VGS = 10V)
● RDS(ON) ＜ 285mΩ (VGS = 10V)
● RDS(ON) ＜ 305mΩ (VGS = 6V)
D
G
D
S
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
1
2
3
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Gate
2.Drain
3.Source
4.Drain
■ Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Ta=25℃ (Note.1)
Power Dissipation
Ta=25℃ (Note.1)
Ta=25℃ (Note.2)
Single Pulsed Avalanche Energy (Note.3)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
PD
EAS
RthJA
RthJC
TJ
Tst g
Rating
150
±20
2.8
12
2.2
1.0
12
55
12
150
-55 to 150
Note1: 55 °C/W when mounted on a 1 in 2 pad of 2 oz copper
Note2: 118 °C/W when mounted on a minimum pad of 2 oz copper
Note3: Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 5 A, VDD = 135 V, VGS = 10 V.
Unit
V
A
W
mJ
℃/W
℃
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